Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications

被引：3

作者：

Amin, Asifa ^{[1
]}

Rathi, Aarti ^{[1
]}

Singh, Sujit K. ^{[1
]}

Dixit, Abhisek ^{[1
]}

Gonzalez, Oscar H. ^{[2
]}

Srinivasan, P. ^{[2
]}

Guarin, Fernando ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, New Delhi, India

[2] GLOBALFOUNDRIES Inc, Qual & Reliabil Engn, Malta, MT USA

来源：

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2022年

关键词：

Activation Energy; Cryogenic CMOS; Dielectric Reliability; PDSOI; Quantum Computing; TDDB; BREAKDOWN; ACCELERATION; RELIABILITY; DEPENDENCE; NANOWIRE; VOLTAGE; MODEL;

D O I：

10.1109/IRPS48227.2022.9764493

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated and report here for the first time time-dependent dielectric breakdown (TDDB) in 45-nm RFSOI n-channel floating body MOSFETs at cryogenic temperatures. DC constant voltage stress is applied at the gate while the substrate chuck temperature is varied from 300K down to 10K. While t63 decreases with increasing temperature, shape parameter beta shows an inverted U-shaped behavior which is explained using the bandgap model. Three levels of activation energy are seen for high, low and deep low temperatures where the activation energy decreases from high to deep low temperatures. The observed behavior is further explained using carrier energy shift in the bandgap as per the percolation theory.

引用

页数：6

共 24 条

[1] Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability [J].

Agarwal, Samarth ;

Pandey, Rajan Kumar ;

Johnson, Jeffrey B. ;

Dixit, Abhisek ;

Bajaj, Mohit ;

Furkay, Stephen S. ;

Oldiges, Phil J. ;

Murali, K. V. R. M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (09) :2728-2733

[2] 3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes [J].

Bansal, Anil K. ;

Gupta, Charu ;

Gupta, Anshul ;

Singh, Ramendra ;

Hook, Terence B. ;

Dixit, Abhisek .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) :1246-1252

[3] Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs [J].

Beckers, Arnout ;

Jazaeri, Farzan ;

Grill, Alexander ;

Narasimhamoorthy, Subramanian ;

Parvais, Bertrand ;

Enz, Christian .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 :780-788

[4] Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction [J].

Degraeve, R ;

Kaczer, B ;

Groeseneken, G .

MICROELECTRONICS RELIABILITY, 1999, 39 (10) :1445-1460

[5] Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films [J].

DiMaria, DJ ;

Stathis, JH .

APPLIED PHYSICS LETTERS, 1999, 74 (12) :1752-1754

[6] TEMPERATURE-DEPENDENCE OF TRAP CREATION IN SILICON DIOXIDE [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) :5234-5246

[7] Discussion on application of the Weibull distribution to electrical breakdown of insulating materials [J].

Fabiani, D ;

Simoni, L .

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2005, 12 (01) :11-16

[8] Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications [J].

Gupta, Sumreti ;

Rathi, Aarti ;

Parvais, Bertrand ;

Dixit, Abhisek .

SOLID-STATE ELECTRONICS, 2021, 185

[9]

Hammoud A, 2003, ICECS 2003: PROCEEDINGS OF THE 2003 10TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3, P44

[10] Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETs [J].

Jain, Ishita ;

Gupta, Anshul ;

Hook, Terence B. ;

Dixit, Abhisek .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (10) :4238-4244

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