Growth and characterization of (1-x)BiFeO3-x(Bi0.5,K0.5)TiO3 thin films

被引：3

作者：

Choi, Jin Hong ^{[1
]}

Yoshimura, Takeshi ^{[1
]}

Fujimura, Norifumi ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Grad Sch Engn, Sakai, Osaka 5998531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 10期

关键词：

PIEZOELECTRIC PROPERTIES; ENHANCED POLARIZATION; ELECTRICAL-PROPERTIES; CERAMICS; MEMS; ACTUATORS; SENSORS;

D O I：

10.7567/JJAP.54.10NA14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of 0.6BiFeO(3)-0.4(Bi-0.5,K-0.5)TiO3 thin films by rf-magnetron sputtering deposition was investigated. The (100)-oriented films with perovskite were grown on (100)-oriented LaNiO3 bottom electrodes at substrate temperatures of 475-575 degrees C. It was found that the lattice constant of the films decreases with increasing growth temperature. Moreover, the films deposited below 505 degrees C show a dielectric permittivity of similar to 600 and a loss tangent of 0.02 at 1 kHz, whereas the films deposited above 540 degrees C show large frequency dispersion. It appears that these results are caused by A-site deficiency. Although ferroelectricity was observed at the growth temperatures of 475 and 505 degrees C, the piezoelectric response was obtained only at 505 degrees C. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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