Investigations of heavy ion irradiation of gallium nitride nanowires and nanocircuits

被引：13

作者：

Ayres, V. M. ^{[1
]}

Jacobs, B. W.

Englund, M. E.

Carey, E. H.

Crimp, M. A.

Ronningen, R. M.

Zeller, A. F.

Halpern, J. B.

He, M. -Q.

Harris, G. L.

Liu, D.

Shaw, H. C.

Petkov, M. P.

机构：

[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA

[2] Howard Univ, Washington, DC 20059 USA

[3] Muniz Engn Inc, Greenbelt, MD 20771 USA

[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[5] NASA, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

gallium nitride (GaN); radiation-induced effects; high-resolution electron microscopy; nanotechnology;

D O I：

10.1016/j.diamond.2005.11.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of a first investigation of the response of gallium nitride nanowires to high-Z heavy ion irradiation are reported. Pre-irradiation characterization of the gallium nitride nanowires used in these experiments showed that that they had a two-phase coaxial structure, consisting of an outer shell of zinc-blende-phase gallium nitride and a coaxial core of wurtzite-phase gallium nitride. Observed radiation interactions with the two-phase structure are reported. A nanowire-based field effect transistor using these GaN nanowires showed normal real-time operation during irradiation by Krypton-78 heavy ions under high bias conditions. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1117 / 1121

页数：5

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