Optical properties of GaN/AlxGa1-xN quantum wells

被引：15

作者：

Cingolani, R

Coli, G

Rinaldi, R

Calcagnile, L

Tang, H

Botchkarev, A

Kim, W

Salvador, A

Morkoc, H

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.56.1491

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of GaN/AlxGa1-xN quantum wells have been investigated by means of various spectroscopic techniques. A detailed assessment of the electronic and excitonic states has been obtained by comparing the temperature and intensity dependent luminescence and luminescence excitation spectra to the calculated band alignment and confinement energies of the quantum well. Room temperature stimulated emission due to localized exciton states is demonstrated by magnetoluminescence experiments under a strong injection rate.

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收藏

页码：1491 / 1495

页数：5

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