Nanoelectronic devices constructed using individual vertically aligned carbon nanofibers

被引：0

作者：

Yang, XJ ^{[1
]}

Austin, D ^{[1
]}

Guillorn, MA ^{[1
]}

Merkulov, VI ^{[1
]}

Melechko, AV ^{[1
]}

Lowndes, DH ^{[1
]}

Simpson, ML ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA

来源：

NANOTECH 2003, VOL 3 | 2003年

关键词：

nanodevice; Vertically Aligned Carbon Nanofiber; Schottky junction; PECVD;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have fabricated active nanoscale electronic devices based on Vertically Aligned Carbon Nanofiber (VACNF) in a way that will be practical for large-scale manufacturing using conventional fabrication technology. The VACNFs are synthesized in a high-density Plasma-Enhanced Chemical Vapor Deposition (PECVD) process. that provides a high degree of control of the growth conditions and consequently, the resultant electronic properties. Rectifying devices containing metal-semiconductor (Schottky) junctions will be presented in this paper and we calculate the barrier height of about 300mV from the temperature sweep measurements. The VACNF devices can operate at current levels of I 100uA current without any sign of damage.

引用

页码：342 / 345

页数：4

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