Sleep Transistor Sizing for Leakage Power Minimization Considering Charge Balancing

被引:8
作者
Chiou, De-Shiuan [1 ]
Chen, Shih-Hsin [1 ]
Chang, Shih-Chieh [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Comp Sci, Hsinchu 30013, Taiwan
关键词
Leakage; power gating; IR drop; CIRCUITS; OPTIMIZATION; DESIGN;
D O I
10.1109/TVLSI.2008.2001247
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
One of the effective techniques to reduce leakage power is power gating. Previously, a Distributed Sleep Transistor Network was proposed to reduce the sleep transistor area for power gating by connecting all the virtual ground lines together to minimize the Maximum Instantaneous Current flowing through sleep transistors. In this paper, we propose a new methodology for determining the sizes of sleep transistors of the DSTN structure. We present novel algorithms and theorems for efficiently estimating a tight upper bound of the voltage drop and minimizing the sizes of sleep transistors. We also present mathematical proofs of our theorems and lemmas in detail. Our experimental results show 23.36% sleep transistor area reduction compared to the previous work on average.
引用
收藏
页码:1330 / 1334
页数:5
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