A Potential Half-Heusler Thermoelectric Material ScAuSn: A First Principle Study

被引：3

作者：

Joshi, H. ^{[1
]}

Rai, D. P. ^{[2
]}

Thapa, R. K. ^{[1
]}

机构：

[1] Mizoram Univ, Dept Phys, Aizawl 796004, India

[2] Pachhunga Univ Coll, Dept Phys, Aizawl 796001, India

来源：

62ND DAE SOLID STATE PHYSICS SYMPOSIUM | 2018年 / 1942卷

关键词：

D O I：

10.1063/1.5029039

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Density Functional Theory along with semi classical Boltzmann transport theory have been applied to study the electronic and thermoelectric property of the Hensler alloy ScAuSn. It has been found that ScAuSn is an indirect band gap semiconductor with a gap of 0.344 eV. The thermoelectric properties such as electrical conductivity (sigma), Seebeck coefficient (5), electronic thennal conductivity (kappa) etc. are reported as a tbnction of chemical potential in the region +/- 2.0 eV, with respect to constant temperature. The calculated ZT value is almost equal to 1, thus making ScAuSn a potential thermoelectric candidate.

引用

页数：4

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