High-sensitivity modulation-doped quantum dot infrared photodetectors

被引：17
作者：
Hirakawa, K
Lee, SW
Lelong, P
Fujimoto, S
Hirotani, K
Sakaki, H
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Corp, CREST, Toshima Ku, Tokyo 1710031, Japan
来源：
MICROELECTRONIC ENGINEERING | 2002年 / 63卷 / 1-3期
关键词：
quantum dots; infrared photodetectors; heterostructures; quantum wells;
D O I：
10.1016/S0167-9317(02)00606-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have designed and fabricated quantum dot (QD) infrared photodetectors which utilize photoionization of self-assembled InAs QDs and lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two-dimensional channels (modulation-doped quantum-dot infrared photodetectors; MD-QDIPs). A broad photocurrent signal has been observed in the mid-infrared range. A very large photoconductive gain of the order of 10(5-6) is achieved by long lifetimes as well as high mobilities of photoexcited carriers in the modulation-doped conduction channels. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：185 / 192
页数：8
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