S-Type Locally Active Memristor-Based Periodic and Chaotic Oscillators

被引:63
|
作者
Liang, Yan [1 ]
Wang, Guangyi [1 ]
Chen, Guanrong [2 ]
Dong, Yujiao [1 ]
Yu, Dongsheng [3 ]
Iu, Herbert Ho-Ching [4 ]
机构
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China
[2] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
[3] China Univ Min & Technol, Sch Elect & Power Engn, Xuzhou 221116, Jiangsu, Peoples R China
[4] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
基金
中国国家自然科学基金;
关键词
Memristors; Oscillators; Mathematical model; Nonlinear dynamical systems; Integrated circuit modeling; Bifurcation; Memristor; local activity; nonlinear dynamics; chaotic circuit; Hopf bifurcation; NONLINEAR DYNAMICS;
D O I
10.1109/TCSI.2020.3017286
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
S-type locally-active memristor (LAM) has a great potential for brain- inspired neuromorphic computing, where the S-type LAM-based oscillator is a fundamental building block. Concerning the S-type LAM, this paper constructs a material-independent model in simple mathematical expression, which can be relatively easily analyzed. By biasing the memristor into the locally- active region, and connecting it with a capacitor, a second-order oscillator can be built. The small-signal equivalent circuit of the memristor and its frequency response are applied to determine the period oscillation frequency range and compensation capacitance. Hopf bifurcation theory is used to analyze oscillation mechanism of the second-order circuit and appropriate capacitance. By adding an extra inductor into the second-order oscillator, a novel third-order chaotic circuit is developed, where a saddle-focus is derived to create chaos. Its dynamic characteristics are investigated via Lyapunov exponents, bifurcation diagrams, dynamic route map, and so on. The local activities of the single memristor, second-order oscillator, and third-order chaotic circuit are verified through the mathematical analysis. Finally, physical circuit realizations of the S- type LAM-based oscillators, including the memristor emulator, are presented. Both simulation and experimental results demonstrate the practicability of the proposed mathematical model and the validity of the theoretical analysis.
引用
收藏
页码:5139 / 5152
页数:14
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