High-strength and high-speed bonding technology using thick Al-Ni wire

被引:1
|
作者
Onuki, J [1 ]
Komiyama, T [1 ]
Chonan, Y [1 ]
Koizumi, M [1 ]
机构
[1] Akita Prefectural Univ, Fac Syst Sci & Technol, Dept Elect & Informat Syst, Honjo 0150055, Japan
关键词
thick aluminum wire bonding; aluminum-nickel wire; high temperature bonding; high speed bonding; shear strength; silicon chip damage;
D O I
10.2320/matertrans.43.2157
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to create high-strength and high-speed thick Al wire bonding technology, high-temperature bonding at 423 K using Al-Ni wire has been investigated. It was found that Al-Ni wire bonds exhibit higher bonding strength than those of Al wire bonds. Al-Ni wire bonds joined at 423 K for 40 ms exhibited high-strength comparable to those of Al-Ni wire bonds joined at RT for 180 ms. It was found that high-temperature, high-speed bonding substantially reduces the occurrence of Si damage. High-temperature and high-speed bonding with Al-Ni wire can be considered as a promising bonding technology for the mass production of low cost power modules.
引用
收藏
页码:2157 / 2160
页数:4
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