Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor

被引:42
作者
Lu, Yen-Cheng [1 ]
Chen, Yung-Sheng
Tsai, Fu-Ji
Wang, Jyh-Yang
Lin, Cheng-Hung
Chen, Cheng-Yen
Kiang, Yean-Woei
Yang, C. C.
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
关键词
dielectric thin films; electronic density of states; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; refractive index; semiconductor quantum wells; surface plasmon resonance; wide band gap semiconductors;
D O I
10.1063/1.3153506
中图分类号
O59 [应用物理学];
学科分类号
摘要
The improved emission enhancement in surface plasmon polariton (SPP) coupling with an InGaN/GaN quantum well (QW) by inserting a SiO2 layer of lower refractive index between the deposited Ag and GaN layers is experimentally and numerically demonstrated. The inserted SiO2 layer leads to reduced SPP dissipation rate, increased evanescent field intensity beyond a certain depth in GaN, and decreased SPP density of state. The combination of these factors can result in further emission enhancement of QW through SPP coupling. For light-emitting diode application, the elongated evanescent field coverage can release the constraint of thin p-type GaN for effective SPP coupling. More importantly, the reduced SPP dissipation can result in more effective emission in such an SPP-QW coupling mechanism.
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页数:3
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