Multi-technique characterization of tantalum oxynitride films prepared by reactive direct current magnetron sputtering

被引:31
作者
Venkataraj, S.
Kittur, H.
Drese, R.
Wuttig, M. [1 ]
机构
[1] Rhein Westfal TH Aachen, Inst Phys 1A, D-52056 Aachen, Germany
[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany
关键词
tantalum oxynitride; sputtering; X-ray reflectivity; ellipsometry;
D O I
10.1016/j.tsf.2005.08.320
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this article we report the structure, deposition rate, density and optical properties of tantalum oxynitride films prepared by reactive direct current magnetron sputtering. Thin films of tantalum oxynitrides were deposited on Si (100), graphite and glass substrates at room temperature from a metallic Ta target, which has been sputtered in an argon-oxygen-nitrogen mixture. These films have been characterized by a variety of techniques including Rutherford backscattering, X-ray photoelectron spectroscopy, X-ray diffraction, X-ray reflectometry, optical spectroscopy and spectroscopic ellipsometry. Addition of nitrogen leads to a beneficial increase of film properties. The sputter rate increases from 0.27 to 0.49 nm/s and the film density increases from 7.15 to 8.65 g/cm(3). This leads to an increase of refractive index of the films. Even for films with a high refractive index of around 2.5, the band gap is found to be above 2.5 eV, i.e., fully transparent films are obtained. Wafer curvature measurements of the samples show that the films possess a high compressive stress. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 9
页数:9
相关论文
共 30 条
[1]   Study of TiOxNy thin film selective surfaces produced by ion assisted deposition [J].
Bittar, A ;
Cochrane, D ;
Caughley, S ;
Vickeridge, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (02) :223-229
[2]   Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)3 (E = CH, N) [J].
Chang, YH ;
Wu, JB ;
Chang, PJ ;
Chiu, HT .
JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (02) :365-369
[3]   Thin film and surface characterization by specular X-ray reflectivity [J].
Chason, E ;
Mayer, TM .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1997, 22 (01) :1-67
[4]   NOTE ON THE ORIGIN OF INTRINSIC STRESSES IN FILMS DEPOSITED VIA EVAPORATION AND SPUTTERING [J].
DHEURLE, FM ;
HARPER, JME .
THIN SOLID FILMS, 1989, 171 (01) :81-92
[5]  
*INT CTR POWD DIFF, 2001, 722067 JCPDS PDF INT
[6]  
*INT CTR POWD DIFF, 2001, 491283 JCPDS PDF INT
[7]   Optical characteristics of sputtered tantalum oxynitride Ta(N,O) films [J].
Jong, CA ;
Chin, TS .
MATERIALS CHEMISTRY AND PHYSICS, 2002, 74 (02) :201-209
[8]   Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films [J].
Kappertz, O ;
Drese, R ;
Wuttig, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (06) :2084-2095
[9]   Formation of thin TiNxOy films by using a hollow cathode reactive DC sputtering system [J].
Kazemeini, MH ;
Berezin, AA ;
Fukuhara, N .
THIN SOLID FILMS, 2000, 372 (1-2) :70-77
[10]   STUDY OF THE LORENTZ-LORENZ LAW AND THE ENERGY-LOSS OF HE-4 IONS IN TITANIUM-OXIDE FILMS [J].
KHAWAJA, EE ;
BOUAMRANE, F ;
ALADEL, F ;
HALLAK, AB ;
DAOUS, MA ;
SALIM, MA .
THIN SOLID FILMS, 1994, 240 (1-2) :121-130