A compact high-voltage pulse generator with opening insulated-gate bipolar transistor switch and a high pulse repetition rate

被引:0
|
作者
Boyko, N. I. [1 ]
Evdoshenko, L. S. [1 ]
Ivanov, V. M. [1 ]
机构
[1] Natl Tech Univ Kharkiv Polytech Inst, Molniya Res & Engn Inst, UA-61013 Kharkov, Ukraine
关键词
High pulse repetition rate - High voltage - High-voltage pulse generator - Low voltage circuits - Pulse corona discharge - Voltage pulse;
D O I
10.1134/S0020441214040022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A small-size high-voltage (similar to 20 kV) microsecond pulse generator, which is based on a pulse transformer and loaded into a reactor with a pulse corona discharge, is described. Insulated-gate bipolar transistors (IGBTs) that form the switch are used in the low-voltage circuit of the generator. When the switch is open, voltage pulses with an amplitude of up to 1000 V are created across it and, hence, across the primary winding of the transformer. The pulse repetition rate of the generator is similar to 20000 pulses/s.
引用
收藏
页码:443 / 452
页数:10
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