A compact high-voltage pulse generator with opening insulated-gate bipolar transistor switch and a high pulse repetition rate

被引：0

作者：

Boyko, N. I. ^{[1
]}

Evdoshenko, L. S. ^{[1
]}

Ivanov, V. M. ^{[1
]}

机构：

[1] Natl Tech Univ Kharkiv Polytech Inst, Molniya Res & Engn Inst, UA-61013 Kharkov, Ukraine

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2014年 / 57卷 / 04期

关键词：

High pulse repetition rate - High voltage - High-voltage pulse generator - Low voltage circuits - Pulse corona discharge - Voltage pulse;

D O I：

10.1134/S0020441214040022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A small-size high-voltage (similar to 20 kV) microsecond pulse generator, which is based on a pulse transformer and loaded into a reactor with a pulse corona discharge, is described. Insulated-gate bipolar transistors (IGBTs) that form the switch are used in the low-voltage circuit of the generator. When the switch is open, voltage pulses with an amplitude of up to 1000 V are created across it and, hence, across the primary winding of the transformer. The pulse repetition rate of the generator is similar to 20000 pulses/s.

引用

页码：443 / 452

页数：10