Nature of breakdown in ultrathin gate dielectrics

被引：0
作者：
Pey, K. L. [1 ]
Tung, C. H. [2 ]
Lo, V. L. [1 ]
Li, X. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
10.1109/ICSICT.2008.4734516
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Post-breakdown reliability forms an important aspect of ultrathin gate dielectric lifetime projection in state-of-the-art MOSFET. In particular, digital breakdown plays a predominant role in the early stage of the dielectric breakdown. In this paper, we review the importance of digital breakdown in SiON gate dielectrics of less than 2.5nm, the possible underlying mechanism(s) and its impact on the post-BD lifetime projection of a device operating at nominal voltages.
引用
收藏
页码：239 / +
页数：2
相关论文
共 12 条
  • [1] Analytic extension of the cell-based oxide breakdown model to full percolation and its implications
    Krishnan, Anand T.
    Nicollian, Paul E.
    [J]. 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 232 - +
  • [2] Growth and scaling of oxide conduction after breakdown
    Linder, BP
    Stathis, JH
    Frank, DJ
    Lombardo, S
    Vayshenker, A
    [J]. 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 402 - 405
  • [3] Multiple digital breakdowns and its consequence on ultrathin gate dielectrics reliability prediction
    Lo, V. L.
    Pey, K. L.
    Tung, C. H.
    Li, X.
    [J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 497 - +
  • [4] A critical gate voltage triggering irreversible gate dielectric degradation
    Lo, V. L.
    Pey, K. L.
    Tung, C. H.
    Ang, D. S.
    [J]. 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 576 - 577
  • [5] LO VL, 2008, THESIS NANYANG TECHN
  • [6] Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
    Lombardo, S
    Stathis, JH
    Linder, BP
    [J]. PHYSICAL REVIEW LETTERS, 2003, 90 (16) : 4
  • [7] The current understanding of the trap generation mechanisms that lead to the power law model for gate dielectric breakdown
    Nicollian, Paul E.
    Krishnan, Anand T.
    Chancellor, Cathy A.
    Kharnankar, Rajesh B.
    Chakravarthi, Srinivasan
    Bowen, Chris
    Reddy, Vijay K.
    [J]. 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 197 - +
  • [8] Significance of breakdown location on post-breakdown transient and MOSFET degradation
    Pey, K. L.
    Selvarajoo, T. A. -L.
    Tung, C. H.
    Ang, D. S.
    Lo, V. L.
    [J]. 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 221 - +
  • [9] Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
    Pey, KL
    Tung, CH
    Radhakrishnan, MK
    Tang, LJ
    Sun, Y
    Wang, XD
    Lin, WH
    [J]. MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1471 - 1476
  • [10] OXYGEN VACANCY AND THE E'1 CENTER IN CRYSTALLINE SIO2
    RUDRA, JK
    FOWLER, WB
    [J]. PHYSICAL REVIEW B, 1987, 35 (15): : 8223 - 8230
12