Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells

被引：1

作者：

Sena, N. ^{[1
]}

Mesa, F. ^{[2
]}

Dussan, A. ^{[1
]}

Gordillo, G. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Dept Fis, Bogota, Colombia

[2] Univ Rosario, Unidad Estudios Univ, Bogota, Colombia

来源：

CANADIAN JOURNAL OF PHYSICS | 2014年 / 92卷 / 7-8期

关键词：

THIN-FILMS; SELENIZATION; PROGRESS;

D O I：

10.1139/cjp-2013-0602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

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页码：902 / 904

页数：3

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