A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-μm Technology

被引:56
作者
Hou, Zhang Ju [1 ,2 ]
Yang, Yang [3 ]
Chiu, Leung [1 ,2 ]
Zhu, Xi [3 ]
Dutkiewicz, Eryk [3 ]
Vardaxoglou, John C. [4 ]
Xue, Quan [5 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen Key Lab MWWC, Shenzhen, Peoples R China
[3] Univ Technol Sydney, Sch Elect & Data Engn, Ultimo, NSW 2007, Australia
[4] Loughborough Univ, Sch Elect Elect & Syst Engn, Loughborough LE11 3TU, Leics, England
[5] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510641, Guangdong, Peoples R China
基金
澳大利亚研究理事会;
关键词
SiGe; W-band; quadrature coupler; broadside coupled strip-line (BCSL); balanced power amplifier; MILLIMETER-WAVE; OUTPUT POWER; 60; GHZ; PEAK PAE; CMOS; RECEIVER; DESIGN;
D O I
10.1109/TCSI.2017.2779174
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and transmitting antennas, contributes to challenging the design of millimeter-wave wireless systems. In this paper, a W-band two-way balanced PA based on a compact quadrature coupler with a broadside coupled stripline (BCSL) as the core is presented to enhance the load-variation insensitivity and stability. The proposed coupler is truly broadband with low amplitude and phase imbalance. The proposed W-band balanced PA achieves higher power-added efficiency (PAE) and unsaturated output power P-sat over wide frequency bandwidth. The W-band balanced PA is implemented in a 0.13-mu m SiGe BiCMOS process and achieves a measured P-sat of 16.3 dBm and a peak PAE of 14.1% at 100 GHz (with 1.6-V power supply). The measured P-sat with 1-dB bandwidth is from 91 to 102 GHz. The measured results present the feasibility of the compact quadrature coupler. The total chip surface area (with pads) is 0.64 mm(2), where the size of the proposed quadrature coupler area is only 0.04 mm(2).
引用
收藏
页码:2139 / 2150
页数:12
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