Foreword Special Issue on Compact Modeling of Semiconductor Devices

被引：0

作者：

Iniguez, Benjamin ^{[1
]}

Chauhan, Yogesh Singh ^{[2
]}

Mijalkovic, Slobodan ^{[3
]}

Xia, Kejun ^{[4
]}

Goo, Jung-Suk ^{[5
]}

Pavanello, Marcelo ^{[6
]}

Mierzwinski, Marek ^{[7
]}

Grabinski, Wladek ^{[8
]}

机构：

[1] Univ Rovira & Virgili, Dept Elect Elect & Automat Control Engn, Catalonia 43007, Spain

[2] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

[3] Silvaco Europe Ltd, EDA Div, Simulat Grp, St Ives PE27 5JL, Cambs, England

[4] NXP Semicond, Dept Front End Innovat, Chandler, AZ 85224 USA

[5] GLOBALFOUNDRIES Inc, Dept Compact Model Dev, Santa Clara, CA 95054 USA

[6] Ctr Univ FEI, Dept Elect Engn, BR-09850901 Sao Bernardo Do Campo, Brazil

[7] Keysight Technol, Dept PathWave Software & Solut, Santa Rosa, CA 95403 USA

[8] GMC Consulting, Dept Res & Dev Modelling, CH-1291 Commugny, Switzerland

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2020年 / 8卷 / 08期

关键词：

D O I：

10.1109/JEDS.2020.3039023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This Special Issue is dedicated to recent research in the field of compact modeling of semiconductor devices. This is the first J-EDS Special Issue on compact modeling. In the last years, a number of new semiconductor device structures, for electronic and photonic applications, have been developed. Compact models are needed for the incorporation of these new devices in integrated circuits. Therefore, a Special Issue was needed to present recent compact modeling solutions for semiconductor devices

引用

页码：1350 / 1353

页数：4

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