Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1-xBixI3 Perovskite-Based Memory Device

被引：86

作者：

Ge, Shuaipeng ^{[1
]}

Wang, Yuhang ^{[2
]}

Xiang, Zhongcheng ^{[1
]}

Cui, Yimin ^{[1
]}

机构：

[1] Beihang Univ, Dept Phys, Minist Educ, Key Lab Micronano Measurement Manipulat & Phys, Beijing 100191, Peoples R China

[2] Tsinghua Univ, Dept Phys, Collaborat Innovat Ctr Quantum Matter, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 29期

基金：

中国国家自然科学基金;

关键词：

CsPb1-xBixI3; perovskite; resistive switching; multilevel high-resistance states; memory device; CH3NH3PBI3; PEROVSKITE; HALIDE PEROVSKITES; STATE; INTERFACE; GRAPHENE;

D O I：

10.1021/acsami.8b07079

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

All-inorganic CsPb1-xBixI3 perovskite film was successfully fabricated by incorporating Bi3+ in CsPbI3 to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb1-xBixI3/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb1-xBixI3/ITO device potential application for multilevel data storage in a nonvolatile memory device.

引用

页码：24620 / 24626

页数：7

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