Micellar poly(styrene-b-4-vinylpyridine)-nanoparticle hybrid system for non-volatile organic transistor memory

被引:92
作者
Leong, Wei Lin [1 ]
Mathews, Nripan [1 ]
Mhaisalkar, Subodh [1 ]
Lam, Yeng Ming [1 ]
Chen, Tupei [2 ]
Lee, Pooi See [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; POLYMERIC GATE ELECTRET; GOLD NANOPARTICLES; BLOCK-COPOLYMER; DEVICES; PERFORMANCE; FABRICATION;
D O I
10.1039/b911493a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present organic field-effect transistor (OFET) memories where in-situ synthesized gold (Au) nanoparticles in self-assembled polystyrene-block-poly-4-vinylpyridine (PS-b-P4VP) block copolymer nanodomains successfully functioned as charge storage elements. Both p-type (pentacene) and n-type (perfluorinated copper phthalocyanine) OFET based memories are reported, which have stable large charge capacity and programmable-erasable properties due to charge confinement in the embedded Au nanoparticles. Optical excitation has been utilized to demonstrate photogenerated minority carrier trapping in the Au nanoparticles for efficient erasing operations. The memory devices can hence be written and read electrically and erased optically, resulting in large memory windows (similar to 9-11 V), high on/off ratio between memory states (10(3)-10(5)) and long retention times (>1000 s). The results clearly indicate the utility of the block copolymer-nanoparticle approach for OFET based memories.
引用
收藏
页码:7354 / 7361
页数:8
相关论文
共 42 条
  • [1] Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
    Baeg, Kang-Jun
    Noh, Yong-Young
    Ghim, Jieun
    Kang, Seok-Ju
    Lee, Hyemi
    Kim, Dong-Yu
    [J]. ADVANCED MATERIALS, 2006, 18 (23) : 3179 - +
  • [2] Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory
    Baeg, Kang-Jun
    Noh, Yong-Young
    Ghim, Jieun
    Lim, Bogyu
    Kim, Dong-Yu
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (22) : 3678 - 3685
  • [3] Bahadur P, 2001, CURR SCI INDIA, V80, P1002
  • [4] New air-stable n-channel organic thin film transistors
    Bao, ZA
    Lovinger, AJ
    Brown, J
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) : 207 - 208
  • [5] Optoelectronic switch and memory devices based on polymer-functionalized carbon nanotube transistors
    Borghetti, Julien
    Derycke, Vincent
    Lenfant, Stephane
    Chenevier, Pascale
    Filoramo, Arianna
    Goffman, Marcelo
    Vuillaume, Dominique
    Bourgoin, Jean-Philippe
    [J]. ADVANCED MATERIALS, 2006, 18 (19) : 2535 - +
  • [6] BRONSTEIN L, 1998, NANOPARTICLES NANOST, P73104
  • [7] SYNTHESIS OF THIOL-DERIVATIZED GOLD NANOPARTICLES IN A 2-PHASE LIQUID-LIQUID SYSTEM
    BRUST, M
    WALKER, M
    BETHELL, D
    SCHIFFRIN, DJ
    WHYMAN, R
    [J]. JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1994, (07) : 801 - 802
  • [8] Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots
    Chen, Chen-Chia
    Chiu, Mao-Yuan
    Sheu, Jeng-Tzong
    Wei, Kung-Hwa
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (14)
  • [9] Cheng JY, 2001, ADV MATER, V13, P1174, DOI 10.1002/1521-4095(200108)13:15<1174::AID-ADMA1174>3.0.CO
  • [10] 2-Q