Raman spectra of ZnGeAs2 highly doped with Mn

被引：4
|
作者：
Romcevic, M. [1 ]
Kilanski, L. [2 ]
Romcevic, N. [1 ]
Hadzic, B. [1 ]
Dobrowolski, W. [2 ]
Fedorchenko, I. V. [3 ]
Marenkin, S. F. [3 ]
机构：
[1] Univ Belgrade, Inst Phys, Belgrade 11080, Serbia
[2] Inst Phys PAS, PL-02668 Warsaw, Poland
[3] Kurnakov Inst Gen & Inorgan Chem RAS, Moscow 119991, Russia
来源：
MATERIALS RESEARCH BULLETIN | 2014年 / 59卷
关键词：
Optical materials; Semiconductors; Raman spectroscopy; Crystal structure; Defects; ARSENIC CLUSTERS; TRANSITION-METAL; MICRO-RAMAN; T-C; GAAS; DISLOCATIONS; SEMICONDUCTOR; POINT; SPECTROSCOPY; SCATTERING;
D O I：
10.1016/j.materresbull.2014.07.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied optical, electrical and structural properties of the semimagnetic semiconducting ZnCeAs2 crystals, undoped and doped with 1.5, 3 and 3.5 wt% Mn, which is perspective material for spintronics. We used Raman spectroscopy as a sensitive method for precise determination of crystal structure. In addition to the vibrational frequencies of a ZnGeAs2 lattice, MnAs clusters and Mn complexes, which we have already experimentally registered at similar materials, the existence of As clusters in this material is revealed for the first time. Based on the obtained results we concluded that arsenic clusters of various sizes exist, including form of molecules -As-4. We assume that they are located in the vicinity of the grain boundaries and that the distribution of free carriers in the samples was inhomogeneous. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：300 / 304
页数：5
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