Multifunctional resistive switching behaviors employing various electroforming steps

被引:24
作者
Lee, Ah Rahm [1 ]
Bae, Yoon Cheol [1 ]
Baek, Gwang Ho [1 ]
Chung, Je Bock [1 ]
Lee, Sang Hyo [2 ]
Im, Hyun Sik [3 ]
Hong, Jin Pyo [1 ,2 ]
机构
[1] Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Res Inst Convergence Basic Sci, Novel Funct Mat & Device Lab, Dept Phys, Seoul 133791, South Korea
[3] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea
关键词
HIGH-PERFORMANCE; MEMORY ARRAY; MEMRISTOR;
D O I
10.1039/c5tc03303a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examine the electroforming-dependent multifunctional resistive switching features by operating a merged Pt/Ta2O5-x/Ta-Ta/Ta2O5-x/Pt switching device under particular bias and polarity conditions. The basic Pt/Ta2O5-x/Ta resistive switching cell comprising the completely merged device shows two different bipolar switching behaviors with an initial forming process under different bias polarities. Therefore, two switching elements can be merged in various ways to produce diverse functionalities such as asymmetric complementary resistive switching (CRS) and typical CRS, achieved through control of the forming process. A possible mechanism to explain the unique features observed is discussed in terms of bias-driven oxygen ion drift and Joule-heating-based filamentary path models. This work suggests a suitable electroforming route for advancing symmetric CRS characteristics.
引用
收藏
页码:823 / 830
页数:8
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