Contributions to switching field in NiO-Co-Cu-based spin valves

被引：3
作者：
Chopra, HD [1 ]
Yang, DX
Chen, PJ
Egelhoff, WF
机构：
[1] SUNY Buffalo, Dept Mech & Aerosp Engn, Mat Program, Thin Film & Nanosynth Lab, Buffalo, NY 14260 USA
[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期
关键词：
D O I：
10.1063/1.373426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present study shows that the often observed and undesirable coercivity enhancement in the free Co layer of spin valves result from magnetostatic coupling between domain walls in the free Co layer and high coercivity NiO-pinned Co layer. The observed escape fields, in excess of intrinsic coercivity of Co single film, required to overcome magnetostatic coupling between domain walls are in agreement with theoretically predicted values. (C) 2000 American Institute of Physics. [S0021-8979(00)63108-0].
引用
收藏
页码：6986 / 6988
页数：3
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