Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs

被引：8

作者：

Jun, BK ^{[1
]}

Kim, DH

Leem, JY

Lee, JH

Lee, YH

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

来源：

THIN SOLID FILMS | 2000年 / 360卷 / 1-2期

关键词：

GaAS MOSFET; molecular beam epitaxy; Al2O3 gate insulator; selective wet thermal oxidation;

D O I：

10.1016/S0040-6090(99)00727-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A I mu m thick undoped GaAs buffer layer, a 1500 Angstrom thick n-type GaAs layer, an undoped 500 Angstrom thick AlAs layer and a 50 Angstrom thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate. The ALAs layer was oxidized in a N-2 bubbled H2O vapor ambient at 400 degrees C for 3 h and fully converted to Al2O3 for use as a gate insulator. The I-V characteristics, having a maximum drain current of 10.6 mA, a current cut-off voltage of -4.5 V and a maximum transconductance value of 11.25 mS/mm, indicate that the selective wet thermal oxidation of AlAs/GaAs was successful in producing a depletion mode GaAs MOSFET. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：229 / 232

页数：4

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