Adsorption and thermal reaction of dodecamethylcyclohexasilane adsorbed on a Si(100) 2 x 1 surface: SiC film growth

被引：0

作者：

Suto, S ^{[1
]}

Sawano, F ^{[1
]}

Harada, H ^{[1
]}

Chiba, T ^{[1
]}

Sakamoto, K ^{[1
]}

Watanabe, A ^{[1
]}

Nanjo, M ^{[1
]}

Liu, X ^{[1
]}

Czajka, R ^{[1
]}

Kasuya, A ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON CLUSTER ASSEMBLED MATERIALS | 2001年 / 3卷

关键词：

silicon carbide (SiC); film growth; silane; HREELS; STM;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the structures and the growth mechanism of cubic silicon carbide (3C-SiC) islands grown by the thermal reaction of dodecamethylcyclohexasilane (DCS) clusters with a Si(100)2 X 1 surface using a combined measurements of high resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy (STM) The dissociation of hydrogen atoms and formation of polycarbosilane are observed at 400 degreesC by the HREELS. At 800 degreesC. SiC islands are grown by thermal reaction of DCS. The optical surface phonon (Fucks-Kliewer) mode of SiC is observed at 106 meV, energy of which is slightly lower than the energy of SiC surface phonon at 116 meV. We find that the rectangular SiC islands grow [110] and [110] directions using the STM.

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页码：146 / 149

页数：4

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