Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

被引：38

作者：

Che, Songbek

Yuki, Akihiko

Watanabe, Hiroshi

Ishitani, Yoshihiro

Yoshikawa, Akihiko ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期

关键词：

HEXAGONAL INN; SEMICONDUCTORS; GAN;

D O I：

10.1143/APEX.2.021001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose the fabrication of asymmetric GaN/InN/InGaN/GaN quantum wells (QWs) composed of the following layers in succession: an similar to 1-monolayer-thick InN well grown on a GaN barrier layer, In0.15-0.20Ga0.85-0.80N layer, and a GaN barrier layer; these QWs can be used for the development of blue-green light emitters. An asymmetric-QW light-emitting diode (LED) emits at around 500 nm; and almost no blue shift is observed in the electroluminescence spectra of the LED at different current levels, indicating that the asymmetric QWs can be used in blue-green light emitters, and the quantum-confined Stark effect can be reduced by employing an ultrathin-InN QW structure. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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