Radiation-induced soft error rates of advanced CMOS bulk devices

被引:141
|
作者
Seifert, N. [1 ]
Slankard, P. [1 ]
Kirsch, M. [1 ]
Narasimham, B. [5 ]
Zia, V. [2 ]
Brookreson, C. [3 ]
Vo, A. [6 ]
Mitra, S. [4 ]
Gill, B. [1 ]
Maiz, J. [1 ]
机构
[1] Intel Corp, Log Technol Dev Q&R, Hillsboro, OR 97124 USA
[2] Intel Corp, Enterprise Microproc Grp, Hillsboro, OR 97124 USA
[3] Intel Corp, Design Enterprise Grp, Hillsboro, OR 97124 USA
[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[5] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[6] Intel Corp, Log Technol Dev Q&R, Folsom, CA 95051 USA
来源
2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年
关键词
SER; soft error; SRAM; sequential; logic; MBU; SEU; radiation; charge collection;
D O I
10.1109/RELPHY.2006.251220
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced.
引用
收藏
页码:217 / +
页数:3
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