Radiation-induced soft error rates of advanced CMOS bulk devices

This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced.