Temperature-induced transport changes in molecular junctions based on a spin crossover complex

被引：30
作者：
Poggini, Lorenzo [1 ,2 ]
Gonidec, Mathieu [1 ,2 ]
Balasubramanyam, Ram Kumar Canjeevaram [1 ,2 ]
Squillantini, Lorenzo [1 ,2 ,3 ,4 ]
Pecastaings, Gilles [5 ]
Caneschi, Andrea [3 ,4 ]
Rosa, Patrick [1 ,2 ]
机构：
[1] CNRS, ICMCB, UMR 5026, F-33600 Pessac, France
[2] Univ Bordeaux, ICMCB, UMR 5026, F-33600 Pessac, France
[3] Univ Florence, DIEF Dept Ind Engn, Via S Marta 3, I-50139 Florence, Italy
[4] Univ Florence, INSTM Res Unit, Via S Marta 3, I-50139 Florence, Italy
[5] Univ Bordeaux, Bordeaux INP, LCPO, CNRS,UMR 5629, F-33607 Pessac, France
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 18期
关键词：
CHARGE-TRANSPORT; DIRECT-CONTACT; THIN-FILMS; VACUUM; METAL; PRESSURE;
D O I：
10.1039/c8tc06587j
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)(2))(2)(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.
引用
收藏
页码：5343 / 5347
页数：5
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