Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping

被引：1
作者：
Feng, Gan [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ,2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6068501, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
micro-photoluminescence mapping; stacking faults; exciton energy gap; STACKING-FAULTS; WAFERS;
D O I：
10.4028/www.scientific.net/MSF.615-617.245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers. Strong PL emissions from the SFs are observed even at room temperature. It is found that each kind of SF shows the distinct PL emission behaviours. Three kinds of SFs: intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples based on the micro-PL spectra. At the same time, the micro-PL intensity mapping at the emission band of each SF has been performed to spatially profile the SFs. The shapes, distributions, and densities of SFs in the epilayers are then presented. The PL emission behaviours of each SF at low temperature are also studied.
引用
收藏
页码：245 / 250
页数：6
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