Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition

被引：32
|
作者：
Huang, Yanwei [1 ]
Zhang, Qun [1 ]
Li, Guifeng [1 ]
Yang, Ming [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
MATERIALS CHARACTERIZATION | 2009年 / 60卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Transparent conductive oxide; Tungsten-doped tin oxide; Thin films; Pulsed plasma deposition; OPTICAL-PROPERTIES; TRANSPARENT; SNO2; ALPHA-AL2O3(0001); STRATEGIES; SURFACE; PURE;
D O I：
10.1016/j.matchar.2008.11.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conductive oxide tungsten-doped tin oxide thin films were deposited on glass substrates from ceramic targets by the pulsed plasma deposition method. The structural, electrical and optical properties have been investigated as functions of tungsten doping content and oxygen partial pressure. The lowest resistivity of 2.1 x 10(-3) Omega.cm was reproducibly obtained, with carrier mobility of 30 cm(2)V(-1)s(-1) and carrier concentration of 9.6 x 10(19) cm(-3) at the oxygen partial pressure of 1.8 Pa. The average optical transmission was in excess of 80% in the visible region from 400 to 700 nm, with the optical band gap ranging from 3.91 to 4.02 eV. (C) 2008 Elsevier Inc. All rights reserved.
引用
收藏
页码：415 / 419
页数：5
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