Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory

被引：21

作者：

Park, Yong-Jin ^{[1
]}

Yang, Tae-Youl ^{[1
]}

Cho, Ju-Young ^{[1
]}

Lee, So-Yeon ^{[1
]}

Joo, Young-Chang ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

THIN-FILMS; AMORPHIZATION;

D O I：

10.1063/1.4818684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical failure in crystalline Ge2Sb2Te5 was observed under a direct current bias, which induces a steady degradation of the electrical conductivity. This failure is induced by electromigration because alternating current bias stressing does not trigger this behavior. Nano-scaled voids were generated during current stressing, which explains the gradual increase in the quantitative resistance. Each nano-void previously comprised a molten phase that was induced by localized melting, which produced compositional variation during the solidification process. The phase-change memory can be damaged by electrical stressing in the non-active regions. (C) 2013 AIP Publishing LLC.

引用

页数：4

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