Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT

被引:44
作者
Kobayashi, S
Nonomura, S
Ohmori, T
Abe, K
Hirata, S
Uno, T
Gotoh, T
Nitta, S
Kobayashi, S
机构
[1] Dept. of Elec. and Comp. Engineering, Gifu University, Gifu 501-11
关键词
amorphous GaN; microcrystalline GaN; persistent photoconductivity; localized level; thin film transistor;
D O I
10.1016/S0169-4332(96)00872-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Amorphous and microcrystalline GaN thin films have been made by reactive sputtering. The dark conductivity can be changed largely from 10(-11) S/cm of amorphous GaN to 10(-3) S/cm of microcrystalline GaN with a crystalline size of 700 Angstrom. Photoconductivity and persistent photoconductivity (PPC) are observed above room temperature in these films. And a thin film transistor (TFT) was made by using GaN film and observed the operation as a TFT.
引用
收藏
页码:480 / 484
页数:5
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