Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT

被引：44

作者：

Kobayashi, S

Nonomura, S

Ohmori, T

Abe, K

Hirata, S

Uno, T

Gotoh, T

Nitta, S

Kobayashi, S

机构：

[1] Dept. of Elec. and Comp. Engineering, Gifu University, Gifu 501-11

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

amorphous GaN; microcrystalline GaN; persistent photoconductivity; localized level; thin film transistor;

D O I：

10.1016/S0169-4332(96)00872-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous and microcrystalline GaN thin films have been made by reactive sputtering. The dark conductivity can be changed largely from 10(-11) S/cm of amorphous GaN to 10(-3) S/cm of microcrystalline GaN with a crystalline size of 700 Angstrom. Photoconductivity and persistent photoconductivity (PPC) are observed above room temperature in these films. And a thin film transistor (TFT) was made by using GaN film and observed the operation as a TFT.

引用

页码：480 / 484

页数：5

共 12 条

[1] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].