W-band double-balanced down-conversion mixer with Marchand baluns in silicon-germanium technology

被引：17

作者：

Kim, J. ^{[1
]}

Kornegay, K. T. ^{[1
]}

Alvarado, J., Jr. ^{[2
]}

Lee, C. -H. ^{[3
]}

Laskar, J. ^{[1
]}

机构：

[1] Georgia Inst Technol, Georgia Elect Design Ctr, Dept Elect & Comp Engn, Atlanta, GA 30308 USA

[2] Raytheon Co, El Segundo, CA 90245 USA

[3] Samsung Design Ctr, Atlanta, GA 30308 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 16期

关键词：

D O I：

10.1049/el.2009.1128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is a monolithic W-band (75-110 GHz) down-conversion mixer consisting of a double-balanced core, Marchand-type on-chip baluns at inputs, and a two-stage output buffer, fabricated in a 200 GHz f(T) SiGe technology. Including the loss for input baluns, this mixer exhibits conversion gains of 14.4 +/- 2.8 dB and single side-band (SSB) noise figures of less than 19.5 dB across the entire W-band, drawing 28 mA from a 3.3 V supply.

引用

页码：841 / 842

页数：2