Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on (11(2)over-bar0) face

被引：23
|
作者：
Kojima, K
Ohno, T
Fujimoto, T
Katsuno, M
Ohtani, N
Nishio, J
Suzuki, T
Tanaka, T
Ishida, Y
Takahashi, T
Arai, K
机构：
[1] R&D Assoc Future Electron Devices, Ultra Low Loss Power Device Technol Res Body & Ad, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Adv Ind Sci & Technol, Ultra Low Loss Power Device Technol Res Body & Ad, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期
关键词：
D O I：
10.1063/1.1512956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of stacking faults (SFs) on the performance of 4H-SiC (11 (2) over bar0) Schottky barrier diodes fabricated on the epilayer grown on the substrate which was grown in [11 (2) over bar0] direction by the sublimation method was investigated. The number of SFs under the Schottky electrode was determined by KOH etching of (1 (1) over bar 00) face cross section. SFs were found to have a severe influence on the leakage current of reverse characteristic and Schottky barrier height. The leakage current is increased even though a few SFs exist under the electrode. The Schottky barrier height is also affected by the SF under the electrode. (C) 2002 American Institute of Physics.
引用
收藏
页码：2974 / 2976
页数：3
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