Subsurface-damaged layer in (010)-oriented β-Ga2O3 substrates

被引：8

作者：

Yamaguchi, Hirotaka ^{[1
]}

Watanabe, Shinya ^{[2
]}

Yamaoka, Yu ^{[2
]}

Koshi, Kimiyoshi ^{[2
]}

Kuramata, Akito ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Novel Crystal Technol Inc, 2-3-1 Hirosedai, Sayama, Saitama 3501328, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 12期

关键词：

β -Ga2O3; subsurface damage; X-ray topography; SINGLE-CRYSTALS; SURFACE; GROWTH; EDGE;

D O I：

10.35848/1347-4065/abcb1c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subsurface damage (SSD) in chemical mechanical polishing (CMP)-finished (010)-oriented beta-Ga2O3 substrates was investigated using optical microscopy and X-ray topography (XRT). Damaged layers at the surface of (010)-oriented substrates caused by lapping and mechanical polishing had measured thicknesses of 50 mu m and 20 mu m, respectively, but no detectable damage was caused by CMP. The damage remained as SSD underneath the CMP-finished surface unless the SSD was completely removed by heat treatment. XRT images of an SSD-free (010)-oriented substrate prepared using CMP after heat treatment unambiguously showed dislocations and twin boundaries.

引用

页数：5