Subsurface-damaged layer in (010)-oriented β-Ga2O3 substrates

被引：0
作者：
Yamaguchi, Hirotaka [1 ]
Watanabe, Shinya [2 ]
Yamaoka, Yu [2 ]
Koshi, Kimiyoshi [2 ]
Kuramata, Akito [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Novel Crystal Technol Inc, 2-3-1 Hirosedai, Sayama, Saitama 3501328, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 12期
关键词：
β -Ga2O3; subsurface damage; X-ray topography; SINGLE-CRYSTALS; SURFACE; GROWTH; EDGE;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Subsurface damage (SSD) in chemical mechanical polishing (CMP)-finished (010)-oriented beta-Ga2O3 substrates was investigated using optical microscopy and X-ray topography (XRT). Damaged layers at the surface of (010)-oriented substrates caused by lapping and mechanical polishing had measured thicknesses of 50 mu m and 20 mu m, respectively, but no detectable damage was caused by CMP. The damage remained as SSD underneath the CMP-finished surface unless the SSD was completely removed by heat treatment. XRT images of an SSD-free (010)-oriented substrate prepared using CMP after heat treatment unambiguously showed dislocations and twin boundaries.
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页数：5
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