Unusual critical behavior of the electrical resistivity near the first-order magneto structural transition of Gd5(Si0.1Ge0.9)4

被引：1

作者：

Correia, FC

Araújo, JP

Sousa, JB

Braga, ME

Morellon, L

Algarabel, PA

Ibarra, MR

机构：

[1] IFIMUP, P-4169007 Oporto, Portugal

[2] Univ Porto, Dept Phys, FCUP, P-4169007 Oporto, Portugal

[3] Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain

[4] Univ Zaragoza, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

[5] CSIC, E-50009 Zaragoza, Spain

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

magnetocaloric compound; magneto-structural first-order transition; electrical resistance; Martensitic transformation;

D O I：

10.1016/j.jmmm.2003.12.1069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the temperature dependence of the electrical resistance (R) of Gd-5(Si0.1Ge0.9)(4) near its (martensitic) magnetostructural transition at T-S similar or equal to 84 K, over different series of 10-300 K thermal cycles (> 50). Large hysteresis is observed near T-S, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (similar to13 - 28) a pre-martensitic phase occurs just below T-S, with the remarkable property of displaying a universal R(T) behavior. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：2370 / 2372

页数：3