Unusual critical behavior of the electrical resistivity near the first-order magneto structural transition of Gd5(Si0.1Ge0.9)4

被引:1
|
作者
Correia, FC
Araújo, JP
Sousa, JB
Braga, ME
Morellon, L
Algarabel, PA
Ibarra, MR
机构
[1] IFIMUP, P-4169007 Oporto, Portugal
[2] Univ Porto, Dept Phys, FCUP, P-4169007 Oporto, Portugal
[3] Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
[4] Univ Zaragoza, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
[5] CSIC, E-50009 Zaragoza, Spain
关键词
magnetocaloric compound; magneto-structural first-order transition; electrical resistance; Martensitic transformation;
D O I
10.1016/j.jmmm.2003.12.1069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the temperature dependence of the electrical resistance (R) of Gd-5(Si0.1Ge0.9)(4) near its (martensitic) magnetostructural transition at T-S similar or equal to 84 K, over different series of 10-300 K thermal cycles (> 50). Large hysteresis is observed near T-S, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (similar to13 - 28) a pre-martensitic phase occurs just below T-S, with the remarkable property of displaying a universal R(T) behavior. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:2370 / 2372
页数:3
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