Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs

被引：9

作者：

Zhou, Wei ^{[1
]}

Zhao, Shuyun ^{[2
]}

Chen, Rongsheng ^{[1
]}

Zhang, Meng ^{[1
]}

Ho, Jacob Y. L. ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Partner State Key Lab, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Nanoelect Fabricat Facil, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 05期

关键词：

Bridged grain (BG); polycrystalline silicon; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; SEQUENTIAL LATERAL SOLIDIFICATION; NANOIMPRINT TECHNOLOGY; SILICON FILMS; PERFORMANCE; FABRICATION;

D O I：

10.1109/TED.2014.2308579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, bridged-grain (BG) poly-Si thinfilm transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.

引用

页码：1410 / 1416

页数：7

共 13 条

[1] Control and analysis of leakage currents in poly-Si thin-film transistors [J].

Brotherton, SD ;

Ayres, JR ;

Trainor, MJ .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :895-904

[2] Study on Characteristics of Poly-Si TFTs With 3-D Finlike Channels Fabricated by Nanoimprint Technology [J].

Chen, Henry J. H. ;

Jhang, Jia-Rong ;

Huang, Chien-Jen .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) :2314-2320

[3] Poly-Si TFTs With Three-Dimensional Finlike Channels Fabricated Using Nanoimprint Technology [J].

Chen, Henry J. H. ;

Jhang, Jia-Rong ;

Huang, Chien-Jen ;

Chen, Sun-Zen ;

Huang, Ju-Chun .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (02) :155-157

[4] Sequential lateral solidification (SLS) process for large area AMOLED [J].

Choi, Jae Beom ;

Chang, Young-Jin ;

Park, Cheol-Ho ;

Kim, Young-il ;

Eom, JiHye ;

Na, Hyung Don ;

Chung, In-Do ;

Jin, Seong Hyun ;

Song, Young-Rok ;

Choi, Beomrak ;

Kim, Hyo Seok ;

Park, Kyongtae ;

Kim, Chi-Woo ;

Souk, JunHyung ;

Kim, Yangsun ;

Jung, Baehyun ;

Park, KeeChan .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :97-+

[5] HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS [J].

HATALIS, MK ;

GREVE, DW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364

[6] A high-performance polysilicon thin-film transistor built on a trenched body [J].

Lin, Jyi-Tsong ;

Huang, Kuo-Dong .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) :2417-2422

[7] Influence of the grain boundaries and intragrain defects on the performance of poly-Si thin film transistors [J].

Morimoto, Y ;

Jinno, Y ;

Hirai, K ;

Ogata, H ;

Yamada, T ;

Yoneda, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) :2495-2501

[8] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

[9] Alternating magnetic field-assisted crystallization of Si films without metal catalyst [J].

Seo, Hyun-Sik ;

Kim, Chang-Dong ;

Kang, InByeong ;

Chung, In-Jae ;

Jeong, Min-Chang ;

Myoung, Jae-Min ;

Shin, Dong-Hoon .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (24) :5317-5320

[10] Sequential lateral solidification of thin silicon films on SiO2 [J].

Sposili, RS ;

Im, JS .

APPLIED PHYSICS LETTERS, 1996, 69 (19) :2864-2866

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