Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

被引：26
|
作者：
Basnet, Rabin [1 ]
Rougieux, Fiacre E. [1 ]
Sun, Chang [1 ]
Phang, Sieu P. [1 ]
Samundsett, Chris [1 ]
Einhaus, Roland [2 ]
Degoulange, Julien [2 ]
Macdonald, Daniel [1 ]
机构：
[1] Australian Natl Univ, Res Sch Engn, Canberra, ACT 2601, Australia
[2] Apollon Solar, F-69002 Lyon, France
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 04期
关键词：
Czochralski (Cz); hydrogenation; phosphorus diffusion gettering; tabula rasa; upgraded metallurgical-grade (UMG) silicon; INTRINSIC POINT-DEFECTS; SOLAR-CELLS; CRYSTAL-GROWTH; PASSIVATION; IMPURITIES; NUCLEATION; HYDROGEN; BEHAVIOR; SURFACE; CARBON;
D O I：
10.1109/JPHOTOV.2018.2834944
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper investigates the potential of three different methods--tabula rasa (TR), phosphorus diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type Czochralski-grown upgraded metallurgical-grade (UMG) silicon samples. Our results show that the lifetimes in the UMG wafers used in this study were affected by both mobile metallic impurities and as-grown oxygen precipitate nuclei. Thus, the dissolution of grown-in oxygen precipitate nuclei via TR and the removal of mobile impurities via PDG step were found to significantly improve the electronic quality of the UMG wafers. Finally, we report bulk lifetimes and 1-sun implied open-circuit voltages of the UMG wafers after boron and phosphorus diffusions, as typically applied in n-type cell fabrication.
引用
收藏
页码：990 / 996
页数：7
相关论文
共 50 条
  • [41] Quality of n-Type Czochralski Silicon Crystals for Solar Cells Grown from the Melt in Liquinert Crucibles
    Fukuda, Tetsuo
    Horioka, Yukichi
    Kariya, Nobumasa
    Tanahashi, Katsuto
    Takato, Hidetaka
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (10) : P562 - P566
  • [42] >1.8 Millisecond Effective Lifetime in n-type Silicon Grown by the Noncontact Crucible Method
    Kivambe, Maulid
    Powell, Douglas M.
    Jensen, Mallory Ann
    Morishige, Ashley E.
    Nakajima, Kazuo
    Murai, Ryota
    Morishita, Kohei
    Buonassisi, Tonio
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 2988 - 2990
  • [43] Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation
    Ishikawa, Yoichiro
    Tajima, Michio
    Kiuchi, Hirotatsu
    Ogura, Atsushi
    Miyamura, Yoshiji
    Harada, Hirofumi
    Kakimoto, Koichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
  • [44] N-type solar-grade silicon purified via the metallurgical route: characterisation and fabrication of solar cells
    Schutz-Kuchly, Thomas
    Sanzone, Vincent
    Veschetti, Yannick
    PROGRESS IN PHOTOVOLTAICS, 2013, 21 (05): : 1214 - 1221
  • [45] Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method
    Kivambe, Maulid
    Powell, DouglasM.
    Castellanos, Sergio
    Jensen, Mallory Ann
    Morishige, Ashley E.
    Nakajima, Kazuo
    Morishita, Kohei
    Murai, Ryota
    Buonassisi, Tonio
    JOURNAL OF CRYSTAL GROWTH, 2014, 407 : 31 - 36
  • [46] Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman
    Basnet, Rabin
    Sun, Chang
    Wu, Huiting
    Nguyen, Hieu T.
    Rougieux, Fiacre Emile
    Macdonald, Daniel
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (24)
  • [47] Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer
    Ryu, Kyungsun
    Choi, Chel-Jong
    Rohatgi, Ajeet
    Ok, Young-Woo
    CURRENT APPLIED PHYSICS, 2016, 16 (05) : 497 - 500
  • [48] Diffusion and electrical properties of iron-related defects in n-type silicon grown by Czochralski- and floating zone method
    Tanaka, Shuji
    Kitagawa, Hajime
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (9 A): : 4656 - 4662
  • [49] Diffusion and electrical properties of iron-related defects in n-type silicon grown by Czochralski- and floating zone method
    Tanaka, S
    Kitagawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (9A): : 4656 - 4662
  • [50] Insights into Bulk Defects in n-type Monocrystalline Silicon Wafers via Temperature-Dependent Micro-Photoluminescence Spectroscopy
    Chin, Robert Lee
    Zhu, Yan
    Coletti, Gianluca
    Binetti, Simona
    Pollard, Michael
    Hameiri, Ziv
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 2524 - 2527
12345