Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

被引：26

作者：

Basnet, Rabin ^{[1
]}

Rougieux, Fiacre E. ^{[1
]}

Sun, Chang ^{[1
]}

Phang, Sieu P. ^{[1
]}

Samundsett, Chris ^{[1
]}

Einhaus, Roland ^{[2
]}

Degoulange, Julien ^{[2
]}

Macdonald, Daniel ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Engn, Canberra, ACT 2601, Australia

[2] Apollon Solar, F-69002 Lyon, France

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 04期

关键词：

Czochralski (Cz); hydrogenation; phosphorus diffusion gettering; tabula rasa; upgraded metallurgical-grade (UMG) silicon; INTRINSIC POINT-DEFECTS; SOLAR-CELLS; CRYSTAL-GROWTH; PASSIVATION; IMPURITIES; NUCLEATION; HYDROGEN; BEHAVIOR; SURFACE; CARBON;

D O I：

10.1109/JPHOTOV.2018.2834944

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper investigates the potential of three different methods--tabula rasa (TR), phosphorus diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type Czochralski-grown upgraded metallurgical-grade (UMG) silicon samples. Our results show that the lifetimes in the UMG wafers used in this study were affected by both mobile metallic impurities and as-grown oxygen precipitate nuclei. Thus, the dissolution of grown-in oxygen precipitate nuclei via TR and the removal of mobile impurities via PDG step were found to significantly improve the electronic quality of the UMG wafers. Finally, we report bulk lifetimes and 1-sun implied open-circuit voltages of the UMG wafers after boron and phosphorus diffusions, as typically applied in n-type cell fabrication.

引用

页码：990 / 996

页数：7

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