PbS Quantum Dot Thin Film Solar Cells Using a CdS Window Layer

We describe results of our investigations of the structural, optical, and electronic properties of PbS-QD films fabricated using layer-by-layer dip coating based on 1,2-ethanedithiol as an insolubilizing agent. Our investigations extend to a study of the photovoltaic properties of heterojunction thin film solar cells fabricated by sputter-deposition of a CdS n-type thin film followed by deposition of a PbS-QD thin film. Our CdS/PbS-QD solar cells exhibit open circuit voltage in excess of previously reported PbS-QD solar cells. Under standard simulated AM1.5G illumination, we observe short circuit current density as high as 12 mA cm(-2), open circuit voltage as high as 0.65 V, and a maximum efficiency of 3.3%.