Microstructure and memory characteristics of ferroelectric LiNbO3/ZnO composite thin films on Pt/TiO2/SiO2/Si substrates

被引：11

作者：

Hao, Lanzhong ^{[1
,2
]}

Li, Yanrong ^{[1
]}

Zhu, Jun ^{[1
]}

Wu, Zhipeng ^{[1
]}

Long, Fengqin ^{[2
]}

Liu, Xingzhao ^{[1
]}

Zhang, Wanli ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] China Univ Petr, Fac Sci, Qingdao 266580, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 590卷

基金：

美国国家科学基金会;

关键词：

Ferroelectric; Films; Interface; Electronic properties; FIELD-EFFECT TRANSISTORS; BUFFER LAYER; ZNO;

D O I：

10.1016/j.jallcom.2013.12.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Composite thin films consisting of ferroelectric LiNbO3 (LN) and ZnO semiconductor layers were grown on Pt/TiO2/SiO2/Si substrates and characterized. The films were single c-axis orientation and had well-defined interfaces without any evidence of interfacial interaction and diffusion. Due to the ferroelectric polarization of LN, counterclockwise capacitance-voltage memory windows were observed clearly. The memory window increased with applied voltage and no obvious charge injection happened. At +/- 8V, a large memory window of similar to 3.3 V was exhibited. The present results suggest that LN ferroelectric films combined with ZnO semiconductor would hold promise for high-performance nonvolatile memory devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：205 / 209

页数：5

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