Fano resonance with high Q and figure of merit in terahertz band based on structural perturbation

被引:4
作者
Feng, Guang [1 ]
Chen, Zhihui [1 ]
Liu, Xin [1 ]
Wang, Xiaowei [1 ]
Liu, Xiao [1 ]
Sun, Fei [1 ]
Yang, Yibiao [1 ]
Wang, Yang [2 ]
Chen, Shuqi [3 ,4 ]
机构
[1] Taiyuan Univ Technol, Coll Phys & Optoelect, Key Lab Adv Transducers & Intelligent Control Syst, Minist Educ & Shanxi Prov, Taiyuan 030024, Peoples R China
[2] Shanxi Univ, Inst Biotechnol, Key Lab Chem Biol & Mol Engn, Minist Educ, Taiyuan 030006, Peoples R China
[3] Nankai Univ, Sch Phys, Key Lab Weak Light Nonlinear Photon, Minist Educ,Renewable Energy Convers & Storage Ctr, Tianjin 300071, Peoples R China
[4] Nankai Univ, TEDA Inst Appl Phys, Tianjin 300071, Peoples R China
基金
中国国家自然科学基金;
关键词
BOUND-STATES;
D O I
10.1063/5.0131487
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fano resonance with high quality (Q) factor and figure of merit (FoM) has significant application prospects in biosensors and lasers. However, most of the previous studies achieve Fano resonance with high Q and FoM by directly regulating the structural asymmetry, which needs high processing precision. To maximize the Q factor of a given resonator, the best constituent material could be a hypothetical perfect electrical conductor (PEC) without ohmic losses. Here, we can indirectly regulate the asymmetry of the structure by perturbation between structures. At low asymmetry, PEC double split rings can obtain high Q factor of 374 and FoM of 257 by adjusting structural asymmetry based on structural perturbation. These are significant for Fano resonances of extremely low-loss and low ohmic losses practical application in the THz band. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:6
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