Electronic structure calculations on the C4 cluster

被引:36
|
作者
Masso, H.
Senent, M. L.
Rosmus, P.
Hochlaf, M.
机构
[1] CSIC, Inst Estructura Mat, Dept Astrofis Mol & Infrarroja, E-28006 Madrid, Spain
[2] Univ Marne la Vallee, Theoret Chem Grp, F-77454 Marne La Vallee 2, France
来源
JOURNAL OF CHEMICAL PHYSICS | 2006年 / 124卷 / 23期
关键词
D O I
10.1063/1.2187972
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The ground and the electronically excited states of the C-4 radical are studied using interaction configuration methods and large basis sets. Apart from the known isomers [l-C-4(X (3)Sigma(-)(g)) and r-C-4(X (1)A(g))], it is found that the ground singlet surface has two other stationary points: s-C-4(X (1)A(g)) and d-C-4(X (1)A(1)). The d-C-4 form is the third isomer of this cluster. The isomerization pathways from one form to the other show that deep potential wells are separating each minimum. Multireference configuration interaction studies of the electronic excited states reveal a high density of electronic states of these species in the 0-2 eV energy ranges. The high rovibrational levels of l-C-4((3)Sigma(-)(u)) undergo predissociation processes via spin-orbit interactions with the neighboring (5)Sigma(+)(g) state. (c) 2006 American Institute of Physics.
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页数:8
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