High temperature oxidation kinetics of reaction-bonded silicon carbide

被引：0
|
作者：
Huang, QW [1 ]
Gao, JQ [1 ]
Jin, ZH [1 ]
机构：
[1] Xian Jiao Tong Univ, Xian 710049, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2000年 / 29卷 / 01期
关键词：
silicon carbide; reaction-bonded; high temperature oxidation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high temperature oxidation kinetics of a reaction-bonded silicon carbide oxided in air at 1 300 degrees C were investigated. It has been found that the oxidation kinetic curve is logarithmic in form indicating the crystallization of amorphous silica and the cracking of oxide scale.
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页码：32 / 34
页数：3
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