Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor

被引：42

作者：

Jang, Kyungmin ^{[1
]}

Ueyama, Nozomu ^{[1
]}

Kobayashi, Masaharu ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

关键词：

Ferroelectric; hafnium-zirconium oxide; negative-capacitance; Landau-Khalatnikov theory; multiple domain; VOLTAGE;

D O I：

10.1109/JEDS.2018.2806920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO2 (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau-Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator.

引用

页码：346 / 353

页数：8

共 29 条

[1]

[Anonymous], 2013, IEEE INT EL DEV M IE, DOI DOI 10.1109/IEDM.2013.6724561

[2]

[Anonymous], 2017 IEEE INT EL DEV, DOI DOI 10.1109/IEDM.2017.8268425

[3] Ferroelectricity in hafnium oxide thin films [J].