Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

被引：450

作者：

Schmidt, Hennrik ^{[1
,2
]}

Wang, Shunfeng ^{[1
,2
]}

Chu, Leiqiang ^{[1
,2
]}

Toh, Minglin ^{[1
,2
]}

Kumar, Rajeev ^{[1
,2
]}

Zhao, Weijie ^{[1
,2
]}

Neto, A. H. Castro ^{[1
,2
]}

Martin, Jens ^{[1
,2
]}

Adam, Shaffique ^{[1
,2
,4
]}

Oezyilmaz, Barbaros ^{[1
,2
]}

Eda, Goki ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore

[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[4] Yale NUS Coll, Singapore 138614, Singapore

来源：

NANO LETTERS | 2014年 / 14卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Molybdenum disulphite; chemical vapor deposition; electronic transport; two-dimensional crystal; FIELD-EFFECT TRANSISTORS; ELECTRONIC TRANSPORT; TRANSITION; MOBILITY; STATES; LIGHT;

D O I：

10.1021/nl4046922

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V-1 s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.

引用

页码：1909 / 1913

页数：5

共 29 条

[1] Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition [J].

Amani, Matin ;

Chin, Matthew L. ;

Birdwell, A. Glen ;

O'Regan, Terrance P. ;

Najmaei, Sina ;

Liu, Zheng ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Dubey, Madan .

APPLIED PHYSICS LETTERS, 2013, 102 (19)

[2] Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].

Baugher, Britton W. H. ;

Churchill, Hugh O. H. ;

Yang, Yafang ;

Jarillo-Herrero, Pablo .

NANO LETTERS, 2013, 13 (09) :4212-4216

[3]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[4] Electronic transport in two-dimensional graphene [J].

Das Sarma, S. ;

Adam, Shaffique ;

Hwang, E. H. ;

Rossi, Enrico .

REVIEWS OF MODERN PHYSICS, 2011, 83 (02) :407-470

[5] Two-Dimensional Crystals: Managing Light for Optoelectronics [J].

Eda, Goki ;

Maier, Stefan A. .

ACS NANO, 2013, 7 (07) :5660-5665

[6] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[7]

Ghatak S, 2011, ACS NANO, V5, P7707, DOI [10.1021/nn202852J, 10.1021/nn202852j]

[8] Band-like transport in high mobility unencapsulated single-layer MoS2 transistors [J].

Jariwala, Deep ;

Sangwan, Vinod K. ;

Late, Dattatray J. ;

Johns, James E. ;

Dravid, Vinayak P. ;

Marks, Tobin J. ;

Lauhon, Lincoln J. ;

Hersam, Mark C. .

APPLIED PHYSICS LETTERS, 2013, 102 (17)

[9] Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles [J].

Kaasbjerg, Kristen ;

Thygesen, Kristian S. ;

Jauho, Antti-Pekka .

PHYSICAL REVIEW B, 2013, 87 (23)

[10] Phonon-limited mobility in n-type single-layer MoS2 from first principles [J].

Kaasbjerg, Kristen ;

Thygesen, Kristian S. ;

Jacobsen, Karsten W. .

PHYSICAL REVIEW B, 2012, 85 (11)

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