Modeling of High-Q Conical Inductors and MOM Capacitors for Millimeter- Wave Applications

被引:6
作者
Jeyaraman, Sathyasree [1 ]
Vanukuru, Venkata Narayana Rao [2 ]
Nair, Deleep [3 ]
Chakravorty, Anjan [3 ]
机构
[1] VIT Chennai, Sch Elect Engn, Chennai 600127, Tamil Nadu, India
[2] GLOBALFOUNDRIES, Bengaluru 560045, India
[3] IIT Madras, Dept Elect Engn, Chennai 600036, Tamil Nadu, India
关键词
Inductors; Integrated circuit modeling; Metals; Capacitors; Capacitance; Method of moments; Proximity effects; Bandpass filter (BPF); capacitive coupling; CMOS; conical inductors; metal-oxide-metal (MOM) capacitor; quality factor; radio frequency integrated circuits; spiral inductor; substrate model; SPIRAL INDUCTORS; DESIGN;
D O I
10.1109/TED.2020.3029236
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conical inductors and metal-oxide-metal (MOM) capacitors are shown to have higher quality factor (Q) characteristics at millimeter wave (mm-wave) frequencies over conventional inductors and nitride MIM capacitors. In this work, Physics-based analytical models are developed for conical inductors and MOM capacitors usable at mm-wave frequencies. The linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting Q-values. Two RL networks coupled by capacitors are proposed to capture the frequency-dependent characteristics of the MOM capacitor. The lumped elements in both these device models are frequency independent and can be calculated using layout and process parameters. The proposed models for conical inductors and MOM capacitors are verified with electromagnetic (EM) simulations till 100 GHz. A prototype 60-GHz bandpass filter (BPF) is fabricated using 0.18 mu m RF-silicon on insulator (SOI) technology to validate the accuracy of the developed compact models. BPF simulation results using the proposed models are shown to be in excellent agreement with those produced with EM simulations and silicon measurements.
引用
收藏
页码:5646 / 5652
页数:7
相关论文
共 29 条
[1]   Switched Substrate-Shield-Based Low-Loss CMOS Inductors for Wide Tuning Range VCOs [J].
Agarwal, Pawan ;
Sah, Suman Prasad ;
Molavi, Reza ;
Mirabbasi, Shahriar ;
Pande, Partha Pratim ;
Oh, Seung Eel ;
Kim, Jong-Hoon ;
Heo, Deukhyoun .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (08) :2964-2976
[2]  
[Anonymous], 2015, PROC 16 ANN IEEE WIR
[3]   Modeling of impedance of rectangular cross-section conductors [J].
Chen, HB ;
Fang, JY .
ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING, 2000, :159-162
[4]   Linear CMOS LC-VCO Based on Triple-Coupled Inductors and Its Application to 40-GHz Phase-Locked Loop [J].
Chen, Zhe ;
Wang, Ming ;
Chen, Ji-Xin ;
Liang, Wen-Feng ;
Yan, Pin-Pin ;
Zhai, Jian-Feng ;
Hong, Wei .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (08) :2977-2989
[5]   A 3-STEP METHOD FOR THE DE-EMBEDDING OF HIGH-FREQUENCY S-PARAMETER MEASUREMENTS [J].
CHO, HJ ;
BURK, DE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1371-1375
[6]   A 60-GHz point-to-multipoint millimeter-wave fiber-radio communication system [J].
Choi, Sung Tae ;
Yang, Ki Seok ;
Nishi, Seiji ;
Shimizu, Satoru ;
Tokuda, Kiyohito ;
Kim, Yong Hoon .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (05) :1953-1960
[7]   DESIGN OF INTERDIGITATED CAPACITORS AND THEIR APPLICATION TO GALLIUM-ARSENIDE MONOLITHIC FILTERS [J].
ESFANDIARI, R ;
MAKI, DW ;
SIRACUSA, M .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (01) :57-64
[8]   An analytical model of electric substrate losses for planar spiral inductors on silicon [J].
Goni, Amaya ;
del Pino, Javier ;
Gonzalez, Benito ;
Hernandez, Antonio .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (03) :546-553
[9]   DESIGN OF PLANAR RECTANGULAR MICROELECTRONIC INDUCTORS [J].
GREENHOUSE, HM .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (02) :101-109
[10]   A physical model for on-chip spiral inductors with accurate substrate modeling [J].
Huo, X. ;
Chan, Philip C. H. ;
Chen, Kevin J. ;
Luong, Howard C. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) :2942-2949